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| SMD Type MOS Field Effect Power Transistors 2SJ324 TO-252 IC MOSFET Features Low on-state resistance RDS(on)=0.18 RDS(on)=0.36 (VGS=-10V,ID=-1A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in G-S Gate Protection Diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s; d 1%. Tch Tstg Symbol VDSS VGSS VGSS ID ID PD Rating -30 -20,+10 20 2.0 8.0 20 1.0 150 -55 to +150 Unit V V V A A W W 3.80 (VGS=-4V,ID=-0.8A) +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 SMD Type 2SJ324 Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery time Reverse Recovery Charge Symbol VDSS VGSS IDSS IGSS Testconditons ID=-10mA,VGS=0 IG= 100 A,VDS=0 Min -200 20 MOSFET IC Typ Max Unit V V VDS=-30V,VGS=0 VGS= 16V,VDS=0 -1.0 1.0 -1.5 1.9 0.18 0.36 330 VDS=-10V,VGS=0,f=1MHZ 290 105 7 VGS(on)=-10V,VDD=-15V,ID=--1A RL=15 ,RG=10 35 40 30 12 VGS=-10V,ID=-2.0A,VDD=-24V 1.5 4.5 IF=2.0A,VGS=0 IF=2.0A,VGS=0,di/dt=50A/ s 0.9 50 40 -10 10 -2.0 A A V S VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg QGS QGD VF trr Qrr VDS=-10V,ID=-1A VGS=-10V,ID=-1A VGS=-4V,ID=-0.8A 0.25 0.52 pF pF pF ns ns ns ns nC nC nC V ns nC 2 www.kexin.com.cn |
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